Samsung’s fifth-generation VNAND and the new Universal Flash Storage eUFS 2.1 enables the first single-chip 1TB memory module for tablets, smartphones and even wearables.

While we all expect more storage each year for less money, it is only four years ago that Samsung broke the 64GB barrier with its 128GB module fitting into the industry standard package size of 11.5 x 13 x 1.2mm. Its new 1TB model is even thinner a 1mm.

Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics said,

“The 1TB eUFS is expected to play a critical role in bringing a more notebook-like user experience to the next generation of mobile devices. Samsung is committed to assuring the most reliable supply chain and adequate production quantities to support the timely launches of upcoming flagship smartphones*.”

*Choi was referring to Samsung Semiconductors supplying many major smartphone makers with parts like memory, photo sensors and processors.

Samsung

The 1TB eUFS uses a G3 2 Lane interface and has exceptional speed gains

First a little lesson in embedded storage.

  • Currently, most smartphones use far slower eMMC storage that has a maximum of 400MBps (half-duplex so halve that for read and write)
  • UFS has crept into top-end, and eUFS 2.1 will be the domain of high-end smartphones. It is the enabler for 64-bit processing, multiple lens cameras, VR capability and AI
  • UFS devices have the storage controller embedded in the silicon – a one-chip solution ideal for notebooks, tablets and wearables as well
  • The 1TB unit uses 90X layers VNAND compared to 64X layers in the 512GB.
  • The G3 2 lane interface allows over 1,000MBps (by comparison an NVMe PCIe M2 SSD can achieve over 3,000MBps)

Samsung

Users can transfer large amounts of multimedia content in a fraction of the time. At up to 1,000MBps it twice the sequential read speed of most 2.5-inch SATA solid state drive (SSD).

This means that 5GB-sized FHD videos can load to an NVMe SSD in as fast as five seconds – twice as fast a typical microSD card.

Random read speed has increased by up to 38% over the 512GB version and 500 times faster than a high-performance microSD card (100 IOPS), coming in at up to 50,000 IOPS. This allows for 960 frames per second and enables smartphone users to take full advantage of the multi-camera capabilities.

Specifications

Memory Sequential
Read Speed
Sequential
Write Speed
Random
Read Speed
Random
Write Speed
Samsung
1TB eUFS 2.1
(Jan. 2019)
1000MB/s 260MB/s 58,000 IOPS 50,000 IOPS
Samsung
512GB eUFS 2.1
(Nov. 2017)
860MB/s 255MB/s 42,000 IOPS 40,000 IOPS
Samsung
eUFS 2.1
for automotive
(Sept. 2017)
850MB/s 150MB/s 45,000 IOPS 32,000 IOPS
Samsung
256GB UFS Card
(July 2016)
530MB/s 170MB/s 40,000 IOPS 35,000 IOPS
Samsung
256GB eUFS 2.0
(Feb. 2016)
850MB/s 260MB/s 45,000 IOPS 40,000 IOPS
Samsung
128GB eUFS 2.0
(Jan. 2015)
350MB/s 150MB/s 19,000 IOPS 14,000 IOPS
eMMC 5.1 250MB/s 125MB/s 11,000 IOPS 13,000 IOPS
eMMC 5.0 250MB/s 90MB/s 7,000 IOPS 13,000 IOPS
eMMC 4.5 140MB/s 50MB/s 7,000 IOPS 2,000 IOPS

Website here.